Automated SiC MOSFET Power Module Switching Characterization Test Platform
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
Yang Shuhao Fudan University
P /P3
2021年08月27日 12:45~12:50
公开 张贴报告
LLC Resonant Converter Based on Trench Gate SiC MOSFET
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
Chu Jinkun Anhui University of Technology
P /P5
2021年08月27日 13:10~13:15
公开 张贴报告
Modeling and Analysis of the Switching Characteristics Difference for Paralleling SiC MOSFETs in Multichip Power Modules
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
Li Wenyu Fudan University, China, Shanghai, 200433
P /P3
2021年08月27日 12:30~12:35
公开 张贴报告
Dynamic gate leakage current of p-GaN Gate AlGaN/GaN HEMT under positive bias Conditions
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
Sun Yu Institute of Microelectronics, Peking University；Han Chun Peking University
P /P3
2021年08月27日 12:00~12:05
公开 张贴报告
Design, Fabrication and Characterization of 6.5 kV/100A 4H-SiC PiN Rectifier
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
Tao Mengling University of Electronic Science and Technology of China
P /P3
2021年08月27日 12:05~12:10
公开 张贴报告
An Integrated GaN-Based Power Module Based on the Cooling-System-Inductor Structure
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
Yu Longyang Xi'an Jiaotong University
P /P5
2021年08月27日 13:25~13:30
公开 张贴报告
A Survey on Modeling of SiC IGBT
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
Wu Yuwei Xi’an Jiaotong University
P /P3
2021年08月27日 12:40~12:45
公开 张贴报告
A GaN-based High Power-density Power Optimizer for Solar-powered Aircraft Applications
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
chen peng Nanjing University of Aeronautics and Astronautics,College of Automation
P /P5
2021年08月27日 12:10~12:15
公开 张贴报告
Influence of CucorAl wire bonding on reliability of SiC devices
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
Chao Fang Zhuzhou CRRC Times Semiconductor Co., Ltd.
P /P4
2021年08月27日 12:25~12:30
公开 张贴报告
The Method for Decoupling the Parasitic Inductance of the Laminated Busbar with SiC MOSFETs in Parallel
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
Yu Shaolin HeFei University of Technology
P /P2
2021年08月27日 12:25~12:30
公开 张贴报告
